A Sub-$lambda$-Size Modulator Beyond the Efficiency-Loss Limit

A Sub-$lambda$-Size Modulator Beyond the Efficiency-Loss Limit

Blog Article

Electrooptic modulators (EOMs) are key devices in performing the conversion between the electrical and optical domains in data communication links.With respect to a road map for photonic computing, future EOMs are required to be highly scalable, should feature strong modulation performance, and must not consume much power during operation.In light of Garnish Stations / Bar Caddies these requirements, here, we investigate indium-tin-oxide (ITO) as an electrooptic switching material.The results show that ITO is capable of changing its extinction coefficient by a factor of 136.Utilizing these findings, we analyze an ultracompact (i.

e., sub- λ long λ = 1310 nm) electroabsorption modulator based on a plasmonic MOS-mode design.In our analysis, we investigate the performance, i.e., the extinction ratio and insertion loss of the device as a function of various geometric parameters of the device.

The optimized device is 0.78 λ long and features an extinction ratio and on-chip insertion loss of about 6 dB/μm and 0.7 dB, respectively.Furthermore, we suggest Motor Parts a metric to benchmark electroabsorption modulators and show that silicon plasmonics has potential for high-end switching nodes in future integrated photonic circuits.